Non-collinear antiferromagnetic materials, which have a net magnetic moment of nearly zero, yet exhibit significant anomalous transverse transport properties, are considered candidate materials for the next generation of spintronic devices.
The magnetic domain structure of these materials is crucial for information storage. However, magnetic domain imaging for non-collinear antiferromagnetic materials such as Mn3Sn and Mn3Ge has always been a significant challenge in this field of research.
Prof. Dazhi Hou’s team from the University of Science and Technology of China, in collaboration with Prof. Yanfeng Guo’s team from ShanghaiTech University, has successfully achieved magnetic domain imaging of Mn3Sn and Mn3Ge using the anomalous Ettingshausen effect and lock-in thermography (LIT) technique. They verified the superiority of this innovative method in simultaneously resolving the magnetic domain structure in both in-plane and out-of-plane directions.
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