In recent years, electronics engineers have been trying to identify semiconducting materials that could substitute for silicon and enable the further advancement of electronic devices. Two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS₂), have proved to be among the most promising solutions, as their thinness and resistance to short-channel effects could yield highly performing and smaller electronics.
To create transistors and other electronic components based on 2D materials, however, engineers need to be able to attach electrical connections to them and reliably form ohmic contacts, which allow electrical current to flow freely through the resulting devices. As devices get smaller, however, they also require smaller contacts that have proved to be very difficult to attach to 2D semiconductors.
Researchers at Nanjing University and other institutes in China recently introduced a new strategy to reliably grow ultra-short and low-resistance semimetallic antimony crystal contacts directly on MoS₂









