Researchers from the Institute of Solid State Physics, the Hefei Institutes of Physical Science of the Chinese Academy of Sciences, in collaboration with Southwest Jiaotong University, have combined high-pressure electrical transport experiments, high-pressure Raman spectroscopy, and first-principles calculations to reveal the structural phase transition behavior of hafnium oxide (HfO2) under high pressure and its evolution mechanism in electrical properties.
The paper is published in the journal Physical Review B.
“This study resolves the previous controversies regarding the phase transitions of HfO2 in the low-pressure region,” said Pan Xiaomei, a member of the team.