Inorganic semiconductors form the backbone of modern electronics due to their excellent physical properties, including high carrier mobility, thermal stability, and well-defined energy band structures, which enable precise control over electrical conductivity. Unfortunately, their intrinsic brittleness has traditionally required the use of costly, complex processing methods like deposition and sputtering—which apply inorganic materials to rigid substrates and limit their suitability for flexible or wearable electronics.
Now, however, a recent breakthrough by researchers from the Shanghai Institute of Ceramics of the Chinese Academy of Sciences and Shanghai Jiao Tong University in the warm processing of traditionally brittle semiconductors offers tremendous potential to expand applications for inorganic semiconductors into these fields.
In their study recently published in Nature Materials, the researchers report achieving plastic warm metalworking in a range of inorganic semiconductors traditionally considered too brittle for such processing. These findings open new avenues for efficient and cost-effective semiconductor manufacturing.