Sep 1, 2016
Carbon nanotube nonvolatile NRAM memory 1000 times faster than Flash will be commercially released by the end of 2018 by Nantero and Fujitsu
Posted by Klaus Baldauf in categories: computing, nanotechnology
Nantero, Fujitsu Semiconductor and Mie Fujitsu Semiconductor today announced an agreement for Fujitsu and Mie Fujtisu to license that Nantero’s technology for NRAM, non-volatile RAM using carbon nanotubes, and to conduct joint development towards releasing a product based on 55-nm process technology.
Three companies are aiming to develop a product using NRAM non-volatile RAM that achieves several 1000 times faster rewrites and many thousands of times more rewrite cycles than embedded flash memory, making it potentially capable of replacing DRAM with non-volatile memory.
Fujitsu Semiconductor plans to develop an NRAM-embedded custom LSI product by the end of 2018, with the goal of expanding the product line-up into stand-alone NRAM product after that. Mie Fujitsu Semiconductor, which is a pure-play foundry, plans to offer NRAM-based technology to its foundry customers.