Imec plots a course to 1nm chips, and beyond.
Imec, the most advanced semiconductor research firm in the world, recently shared its sub-‘1nm’ silicon and transistor roadmap at its Future Summit event in Antwerp, Belgium. The roadmap gives us a rough idea of the timelines through 2036 for the next major process nodes and transistor architectures the company will research and develop in its labs in cooperation with industry giants, like TSMC, Intel, Samsung, and ASML, among many others.
The roadmap includes breakthrough transistor designs that evolve from the standard FinFET transistors that will last until 3nm, to new Gate All Around (GAA) nanosheets and forksheet designs at 2nm and A7 (seven angstroms), respectively, followed by breakthrough designs like CFETs and atomic channels at A5 and A2. As a reminder, ten Angstroms are equal to 1nm, so Imec’s roadmap encompasses sub-‘1nm’ process nodes.
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