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Lithium-ion batteries have been a staple in device manufacturing for years, but the liquid electrolytes they rely on to function are quite unstable, leading to fire hazards and safety concerns. Now, researchers at Penn State are pursuing a reliable alternative energy storage solution for use in laptops, phones and electric vehicles: solid-state electrolytes (SSEs).

According to Hongtao Sun, assistant professor of industrial and manufacturing engineering, solid-state batteries—which use SSEs instead of liquid electrolytes—are a leading alternative to traditional . He explained that although there are key differences, the batteries operate similarly at a fundamental level.

“Rechargeable batteries contain two internal electrodes: an anode on one side and a cathode on the other,” Sun said. “Electrolytes serve as a bridge between these two electrodes, providing fast transport for conductivity. Lithium-ion batteries use liquid electrolytes, while solid-state batteries use SSEs.”

Paper link : https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.134.

Chapters:
00:00 Introduction.
00:49 Breaking the Classical Wall – What the Game Revealed.
02:32 Entanglement at Scale – Knots, Topology, and Robust Design.
03:51 Implications – A New Era of Quantum Machines.
07:37 Outro.
07:47 Enjoy.

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MUSIC LINK : https://pixabay.com/music/pulses-starlight-harmonies-185900/

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A discovery by an international team of scientists has revealed room-temperature ferroelectric and resistive switching behaviors in single-element tellurium (Te) nanowires, paving the way for advancements in ultrahigh-density data storage and neuromorphic computing.

Published in Nature Communications, this research marks the first experimental evidence of ferroelectricity in Te nanowires, a single-element material, which was previously predicted only in theoretical models.

“Ferroelectric materials are substances that can store electrical charge and keep it even when the power is turned off, and their charge can be switched by applying an external electric field—a characteristic essential for non-volatile memory applications,” points out co-corresponding author of the paper Professor Yong P. Chen, a principal investigator at Tohoku University’s Advanced Institute for Materials Research (AIMR) and a professor at Purdue and Aarhus Universities.

How can electronic “skin” help advance the electronics and computer industry? This is what a recent study published in Nature hopes to address as a team of researchers from the Massachusetts Institute of technology (MIT) and funded by the U.S. Air Force Office of Scientific Research developed an ultrathin electronic “skin” that can sense heat and radiation. This study has the potential to expand the electronics industry by enhancing wearable and imaging devices used on smaller scales than at present.

For the study, the researchers designed and built a pyroelectric (temperature changes to create electric current) material that is only 10 nanometers thick while exhibiting superior sensing capabilities for wide ranges of heat and radiation. To accomplish this, the team conducted a series of laboratory experiments to verify the material’s capabilities, including using the material on a computer chip that measured approximately 60 square microns (approximately 0.006 square centimeters) and comprised of 100 ultrathin heat-sensing pixels. The pixels were then subjected to temperature changes to demonstrate its ability to measure those changes, which the researchers noted was successful.

“This film considerably reduces weight and cost, making it lightweight, portable, and easier to integrate,” said Xinyuan Zhang, who is a PhD student in MIT’s Department of Materials Science and Engineering (DMSE) and lead author of the study. “For example, it could be directly worn on glasses.”

However, when photons are contained within structures that are smaller than their wavelength, these measures collapse into each other, and so the definition is of total angular momentum (TAM). It’s this feature, only occurring for photons confined in this way, that has now been entangled for the first time.

Researchers at Technion-Israel Institute of Technology used gratings to confine photons within a circular or spiral nanoscale platform and mapped their states, entangling the TAMs of pairs of photons before scattering them to free space. Entangling TAMs might seem like a minor development, seeing that SAMs and OAMs have each been entangled before, but the authors write: “We observe that entanglement in TAM leads to a completely different structure of quantum correlations of photon pairs, compared with entanglement related to the two constituent angular momenta.”

Quantum entanglement is considered key to quantum computing. The authors propose their work could lead to information processing conducted using the entangled TAMs of photons confined to chips. Entangling TAMs allows quantum processors based around photons to be smaller than would be possible if one of the properties that only emerges under less confined conditions was used. That potentially enables the miniaturization of future quantum computers.

Researchers from Max Born Institute have demonstrated a successful way to control and manipulate nanoscale magnetic bits—the building blocks of digital data—using an ultrafast laser pulse and plasmonic gold nanostructures. The findings were published in Nano Letters.

All-optical, helicity-independent magnetization switching (AO-HIS) is one of the most interesting and promising mechanisms for this endeavor, where the magnetization state can be reversed between two directions with a single femtosecond laser pulse, serving as “0s” and “1s” without any or complex wiring. This opens up exciting possibilities for creating memory devices that are not only faster and more robust but also consume far less power.

Ultrafast light-driven control of magnetization on the nanometer-length scale is key to achieving competitive bit sizes in next-generation data storage technology. However, it is currently not well understood to what extent basic physics processes such as at the nanoscale and the propagation of magnetic domain walls limit the minimum achievable bit size.

Ultrafast light-driven control of magnetization on the nanometer length scale is key to achieve competitive bit sizes in next generation data storage technology. Researchers at Max Born Institute in Berlin and of the large scale facility Elettra in Trieste, Italy, have successfully demonstrated the ultrafast emergence of all-optical switching by generating a nanometer scale grating by interference of two pulses in the extreme ultraviolet spectral range.

The physics of optically driven magnetization dynamics on the femtosecond time scale is of great interest for two main reasons: first, for a deeper understanding of the fundamental mechanisms of nonequilibrium, ultrafast spin dynamics and, second, for the potential application in the next generation of information technology with a vision to satisfy the need for both faster and more energy efficient data storage devices.

All– (AOS) is one of the most interesting and promising mechanisms for this endeavor, where the magnetization state can be reversed between two directions with a single femtosecond laser pulse, serving as “0s” and “1s.” While the understanding of the temporal control of AOS has progressed rapidly, knowledge on ultrafast transport phenomena on the nanoscale, important for the realization of all-optical magnetic reversal in technological applications, has remained limited due to the wavelength limitations of optical radiation. An elegant way to of overcoming these restrictions is to reduce the wavelengths to the extreme ultraviolet (XUV) spectral range in transient grating experiments. This technique is based on the interference of two XUV beams leading to a nanoscale excitation pattern and has been pioneered at the EIS-Timer beamline of the free-electron laser (FEL) FERMI in Trieste, Italy.