FuzzingLabs reproduced the bug on RHEL 10 ahead of Pwn2Own Berlin 2026, building its own root exploit by a different route. The timeline is tight: the fix shipped February 5, FuzzingLabs published April 16, and Exodus’s detailed write-up landed June 8.
The technique is now documented across Debian, Ubuntu, and Red Hat. Because the bug is in the mainline, any distribution that shipped a vulnerable kernel with both features enabled is exposed, unless a distribution’s hardening or namespace restrictions block the path.
CVE-2026–23111 lands in the middle of a heavy run of Linux local-root disclosures. Recent weeks have brought Copy Fail, the Dirty Frag chain, its Fragnesia variant, DirtyDecrypt, and a nine-year-old ptrace flaw that reads /etc/shadow and runs commands as root.
Seoul National University researchers have developed an ultra-low-voltage electrochemical organic light-emitting transistor that can simultaneously perform signal processing, memory and light emission within a single semiconductor device. By introducing an ion-transport enhancer into the light-emitting polymer semiconductor channel, the team enabled electric-double-layer formation at the drain electrode interface, allowing efficient electron injection without relying on the high voltages or unstable n-type doping used in conventional approaches.
As a result, the device maintained a simple single-active-layer structure while achieving both low-voltage operation and wide, spatially pinned light emission, together with neuromorphic signal-processing functionality.
The work is published in the journal Nature Materials.
In recent years, computer chip performance has bumped up against the physical limitations of the space available on integrated circuits.
Now researchers think they’ve found a solution: Start building upwards.
The innovation could help extend or even exceed the Moore’s Law hypothesis established in the 1960s by Intel chairman Gordon Moore.
As semiconductor chips become increasingly thinner, the components inside chips are locked in a fierce race to achieve the ultimate ultra-thin state. However, this has presented a structural limitation: the thinner the device, the harder it is for electricity to flow.
Recently, a research team at POSTECH (Pohang University of Science and Technology) successfully resolved this issue through a simple yet innovative approach: “thickening only the necessary parts.”
The research team, led by Professor Byoung Hun Lee from POSTECH’s Department of Electrical Engineering and the Department of Semiconductor Engineering, has developed a technology that dramatically lowers contact resistance by redesigning the metal-semiconductor contact structure in ultra-thin tellurium (Te) transistors.
